Semiconductor device and method for manufacturing the same

ABSTRACT

There is disclosed a semiconductor device comprising a P-channel MIS transistor which includes an N-type semiconductor layer, a first gate insulating layer formed on the N-type semiconductor layer and containing a carbon compound of a metal, and an N-channel MIS transistor which includes a P-type semiconductor layer, a second gate insulating layer formed on the P-type semiconductor layer, and a second gate electrode formed on the second gate insulating layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromprior Japanese Patent Application No. 2005-059396, filed Mar. 3, 2005,the entire contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device and a method formanufacturing the same.

2. Description of the Related Art

In the case of manufacturing a next-generation complementary metal oxidesemiconductor (CMOS) device in which a gate length is a submicron size,there is a high possibility that silicon which has been used in previousgenerations will not be able to be directly used as a gate electrode ofa MIS transistor constituting the device.

One of reasons of the above is that since sheet resistance of thesilicon is as high as several tens Ω/□, a so-called RC delay cannot beignored any more during a device operation, if the silicon is used forthe gate electrode. It is generally considered that in the case of thedevice in which the gate length is the submicron size, the sheetresistance of the gate electrode which permits the RC delay to beignored is 5 Ω/□ or less.

Another of the above-mentioned reasons resides in depletion of the gateelectrode. A solution limit of impurities (dopants) with respect tosilicon is about 1×10²⁰ cm⁻³. Therefore, when the gate electrode is madeof silicon, a depletion layer of a limited length spreads in the gateelectrode to cause deterioration in current driving force of the MIStransistor.

Specifically, as this depletion layer has a capacitance to be seriallyconnected to a gate insulating layer between the gate electrode and achannel, a gate capacitance of the MIS transistor is substantiallyformed into a shape in which the capacitance of the deletion layer isadded to the capacitance of the gate insulating layer. For example, whenconverted into a thickness of silicon oxide of the gate insulatinglayer, this added capacitance is about 0.3 nm.

It is likely in the future that a thickness of gate insulating layer ofthe MIS transistor will become 1.5 nm or less when the silicon oxide isused. Thus, the capacitance of the depletion layer will become 20percent or more of that of the gate insulating layer, which will not beignored any more.

As one of means to solve the problem, addition of a high concentrationof impurities (phosphorus, boron, or the like) to the silicon gateelectrode has been tried to reduce its specific resistance. However, inthe case of the MIS transistor having the gate length set to thesubmicron size, the thickness of the gate insulating layer becomes 1.5nm or less as described above. In this case, a problem occurs in whichthe impurities in the gate electrode pass through the gate insulatinglayer to diffuse to or penetrate a silicon substrate.

Such diffusion or penetration of the impurities causes a fluctuation indrive current or threshold voltage of the MIS transistor.

Recently, therefore, use of a high-melting point metal such asmolybdenum, tungsten or tantalum, or a nitride thereof for the gateelectrode has been tried. This is called a metal gate technology.

According to the metal gate technology, as the gate electrode is made ofa metal whose specific resistance is lower than that of the silicon, anRC delay can basically be ignored. As no depletion layer is formed inthe metal in principle, no reduction occurs in current driving force ofthe MIS transistor by the deletion layer formed in the silicon gate.Additionally, as it is not necessary to add any impurities to the metalgate to reduce its specific resistance, no fluctuation occurs in drivingforce or threshold voltage of the MIS transistor by diffusion orpenetration of impurities.

However, the metal gate technology is not perfect. In the case ofmanufacturing a CMOS device by this technology, the following uniqueproblems occur.

That is, according to the metal gate technology, a metal material havinga work function close to that of P⁺ silicon must be used for a gateelectrode in the case of a P-channel MIS transistor. A metal materialhaving a work function close to that of N⁺-silicon must be used for agate electrode in the case of an N-channel MIS transistor. This way, itis possible to set threshold values of the P-channel MIS transistor andthe N-channel MIS transistor to proper values.

This is called a dual phi (φ) metal gate. In reality, however, it isdifficult to discover a metal material having a work function close tothat of the P⁺ silicon or the N⁺-silicon and high thermal stability.Thus far, no optimal materials that satisfy such conditions have beenfound for the gate insulating layer or the gate electrode.

Even if a metal material having high thermal stability and proper workfunction for the gate insulating layer or the gate electrode isdiscovered, it is useless unless the metal material can be formed by anLSI manufacturing process. In short, in addition to the structure of theMIS transistor by the dual φ metal gate technology, a manufacturingmethod without any increased number of steps and complexity is demanded.

BRIEF SUMMARY OF THE INVENTION

A semiconductor device according to a first aspect of the presentinvention comprises: a P-channel MIS transistor which includes an N-typesemiconductor layer, a first gate insulating layer formed on the N-typesemiconductor layer, and a first gate electrode formed on the first gateinsulating layer and containing a carbon compound of a metal; and anN-channel MIS transistor which includes a P-type semiconductor layer, asecond gate insulating layer formed on the P-type semiconductor layer,and a second gate electrode formed on the second gate insulating layer.

A semiconductor device according to a second aspect of the presentinvention comprises: a P-channel MIS transistor which includes an N-typesemiconductor layer, a first gate insulating layer formed on the N-typesemiconductor layer, and a first gate electrode formed on the first gateinsulating layer and in which a carbon compound of a metal is present onan interface between the first gate insulating layer and the first gateelectrode; and an N-channel MIS transistor which includes a P-typesemiconductor layer, a second gate insulating layer formed on the P-typesemiconductor layer, and a second gate electrode formed on the secondgate insulating layer.

A semiconductor device according to a third aspect of the presentinvention comprises: a P-channel MIS transistor which includes an N-typesemiconductor layer, a first gate insulating layer formed on the N-typesemiconductor layer, and a first gate electrode formed on the first gateinsulating layer and in which a carbon compound of a metal is present ona portion different from an interface between the first gate insulatinglayer and the first gate electrode; and an N-channel MIS transistorwhich includes a P-type semiconductor layer, a second gate insulatinglayer formed on the P-type semiconductor layer, and a second gateelectrode formed on the second gate insulating layer.

A manufacturing method of a semiconductor device according to a firstaspect of the present invention comprises: forming gate insulatinglayers on a P-type semiconductor area and an N-type semiconductor area;forming a first gate material made of a metal, or a boride, silicide ora silicon nitride thereof on the gate insulating layer on the P-typesemiconductor area; forming a second gate material made of a carboncompound of the metal on the gate insulating layer on the N-typesemiconductor area; simultaneously etching the first and second gatematerials to form a first gate electrode from the first gate materialand a second gate electrode from the second gate material; and formingan N-type diffusion layer in the P-type semiconductor area and a P-typediffusion layer in the N-type semiconductor area.

A manufacturing method of a semiconductor device according to a secondaspect of the present invention comprises: forming gate insulatinglayers on a P-type semiconductor area and an N-type semiconductor area;forming a carbon layer on the gate insulating layer on the N-typesemiconductor area; forming a gate material made of a metal, or aboride, silicide or a silicon nitride thereof on the gate insulatinglayer and the carbon layer on the N-type semiconductor area; convertingthe carbon layer into a carbon compound of the metal by heat treatment;etching the gate material and the carbon compound of the metal to form afirst gate electrode made of the gate material and a second gateelectrode made of the gate material and the carbon compound of themetal; and forming an N-type diffusion layer in the P-type semiconductorarea and a P-type diffusion layer in the N-type semicoductor area.

A manufacturing method of a semiconductor device according to a thirdaspect of the present invention comprises: forming gate insulatinglayers on a P-type semiconductor area and an N-type semiconductor area;forming a gate material made of a metal, or a boride, silicide or asilicon nitride thereof on the gate insulating layer; implanting carbonions into the gate material on the N-type semiconductor area; forming acarbon compound of a metal on an interface between the gate insulatinglayer and the gate material on the N-type semiconductor area by heattreatment; etching the gate material and the carbon compound of themetal to form a first gate electrode made of the gate material and asecond gate electrode made of the gate material and the carbon compoundof the metal; and forming an N-type diffusion layer in the P-typesemiconductor area and a P-type diffusion layer in the N-typesemiconductor area.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is a diagram showing a relation between a material of a gateinsulating layer and a work function;

FIG. 2 is a sectional diagram showing a CMOS device according to a firstembodiment;

FIG. 3 is a sectional diagram showing a step of a manufacturing methodof the device of FIG. 2;

FIG. 4 is a sectional diagram showing a step of the manufacturing methodof the device of FIG. 2;

FIG. 5 is a sectional diagram showing a step of the manufacturing methodof the device of FIG. 2;

FIG. 6 is a sectional diagram showing a step of the manufacturing methodof the device of FIG. 2;

FIG. 7 is a sectional diagram showing a step of the manufacturing methodof the device of FIG. 2;

FIG. 8 is a sectional diagram showing a step of the manufacturing methodof the device of FIG. 2;

FIG. 9 is a sectional diagram showing a step of the manufacturing methodof the device of FIG. 2;

FIG. 10 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 2;

FIG. 11 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 2;

FIG. 12 is a sectional diagram showing a CMOS device according to asecond embodiment;

FIG. 13 is a sectional diagram showing a step of a manufacturing methodof the device of FIG. 12;

FIG. 14 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 12;

FIG. 15 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 12;

FIG. 16 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 12;

FIG. 17 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 12;

FIG. 18 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 12;

FIG. 19 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 12;

FIG. 20 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 12;

FIG. 21 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 12;

FIG. 22 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 12;

FIG. 23 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 12;

FIG. 24 is a diagram showing a relation between a gate voltage and acapacitance;

FIG. 25 is a diagram showing a relation between a gate voltage andleakage;

FIG. 26 is a sectional diagram showing a CMOS device according to athird embodiment;

FIG. 27 is a sectional diagram showing a step of a manufacturing methodof the device of FIG. 26;

FIG. 28 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 26;

FIG. 29 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 26;

FIG. 30 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 26;

FIG. 31 is a sectional diagram showing a CMOS device according to afourth embodiment;

FIG. 32 is a sectional diagram showing a step of a manufacturing methodof the device of FIG. 31;

FIG. 33 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 31;

FIG. 34 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 31;

FIG. 35 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 31;

FIG. 36 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 31;

FIG. 37 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 31;

FIG. 38 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 31;

FIG. 39 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 31;

FIG. 40 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 31;

FIG. 41 is a sectional diagram showing a CMOS device according to afifth embodiment;

FIG. 42 is a sectional diagram showing a step of a manufacturing methodof the device of FIG. 41;

FIG. 43 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 41;

FIG. 44 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 41;

FIG. 45 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 41;

FIG. 46 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 41;

FIG. 47 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 41;

FIG. 48 is a sectional diagram showing a CMOS device according to asixth embodiment;

FIG. 49 is a sectional diagram showing a step of a manufacturing methodof the device of FIG. 48;

FIG. 50 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 48;

FIG. 51 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 48;

FIG. 52 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 48;

FIG. 53 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 48; and

FIG. 54 is a sectional diagram showing a step of the manufacturingmethod of the device of FIG. 48.

DETAILED DESCRIPTION OF THE INVENTION

A semiconductor device of an aspect of the present invention will bedescribed below in detail with reference to the accompanying drawings.

1. Overview

An aspect of the present invention relates to a CMOS device, andcharacterized in that a gate electrode of a P-channel MIS transistorcontains a carbon compound of a metal, or there is a carbon compound ofa metal on an interface between a gate insulating layer and the gateelectrode of the P-channel MIS transistor or a portion different fromthe interface.

For the metal of the carbon compound, one is selected from a group ofTi, Ta, Zr, Hf, V, Nb, Cr, Mo, W, La, and Y in consideration of heatresistance or the like.

A gate electrode of an N-channel MIS transistor is made of, e.g., one ofmetals Ti, Ta, Zr, Hf, V, No, Cr, Mo, W, La and Y, or a boride, asilicide or silicon nitride of such a metal.

From the viewpoint of processing, a main portion of the gate electrodeof the P-channel MIS transistor may be made of the same material as thatof the gate electrode of the N-channel MIS transistor, e.g., one of themetals Ti, Ta, Zr, Hf, V, Nb, Cr, Mo, W, La, and Y, or the boride, thesilicide or the silicon nitride of such a metal.

In view of corrosion resistance, oxidation resistance or the like, thegate electrodes of the P and N-channel MIS transistors may both employlaminated structures, and an uppermost layer of each thereof may be madeof one of Si and SiGe.

By employing such a structure, it is possible to provide a CMOS devicehaving low resistance and thermal stability, and a gate electrode inwhich problems of depletion and diffusion or penetration of impuritieswill never occur.

There is available a technology which uses a carbon compound of tantalum(TaxCy) for a gate electrode (see Nonpatent Document 1).

According to this technology, a vacuum work function electricallybecomes 4.18 eV when TaxCy of 3.7 eV is formed on HfO₂. As shown in FIG.1, this value is suitable for the gate electrode of the N-channel MIStransistor of the CMOS device. The Nonpatent Document 1 shows actualstudies on characteristics of the N-channel MIS transistor which usesTaxCy for the gate electrode.

On the other hand, the aspect of the present invention focuses on thegate electrode of the P-channel MIS transistor. This is because theaforementioned conventional problems mainly affect the P-channel MIStransistor greatly. In other words, a switching speed is faster in theP-channel MIS transistor having carries as holes than in the N-channelMIS transistor having carriers as electrons, and diffusion orpenetration of impurities causes a greater fluctuation in driving forceor threshold voltage.

Thus, according to the aspect of the present invention, the processstarts from discovery of a combination of the gate electrode and thegate insulating layer to obtain a work function of the gate electrodesuitable for the P-channel MIS transistor. Accordingly, the aspect ofthe present invention is completely different from a technical ideadisclosed in the Nonpatent Document 1.

According to the aspect of the present invention, for example, atantalum carbon compound (TaxCy) is used for the gate electrode of theP-channel MIS transistor. The vacuum work function of TaxCy is 3.7 eV asdescribed above. As shown in FIG. 1, however, when HfSiON is used forthe gate insulating layer, the work function of TaxCy becomes 4.94 eV.When SiO₂ is used for the gate insulating layer, the work function ofTaxCy becomes 4.78 eV.

This value is suitable for the gate electrode of the P-channel MIStransistor. Thus, the aspect of the present invention provides aP-channel MIS transistor which has high thermal stability but nofluctuation in driving force or threshold voltage and can carry outhigh-speed switching.

Table 1 shows an aspect of a material combination of the gate electrodeand the gate insulating layer to obtain a work function suitable for thegate electrode of the P-channel MIS transistor. TABLE 1 Work function ofgate electrode Gate insulating Gate electrode film material materialSiO₂ HfSiON Ti carbide 4.74 eV 5.00 eV Ta carbide 4.78 eV 4.94 eV Wcarbide 4.88 eV 4.96 eV

Generally, the work function of the gate electrode when HfSiON is usedfor the gate insulating layer becomes higher by 0.2 to 0.3 eV than thatof the gate electrode when SiO₂ is used for the gate insulating layer.

In the case of using TaxCy for the gate electrode of the P-channel MIStransistor, the TaxCy is set in a crystal state. When the TaxCy is (111)oriented, it is possible to obtain a threshold voltage most suitable forthe P-channel MIS transistor.

This is because an atomic surface density of a (111) surface of theTaxCy is high. The work function which is energy of pulling outelectrons from a solid object is generally higher in the case of amaterial of a higher atomic surface density.

2. Embodiments

Next, some preferred embodiments will be described.

(1) First Embodiment

A first embodiment is directed to a CMOS device in which materials of Nand P-channel MIS transistors are different from each other.

A. Structure

FIG. 2 shows a sectional structure of the CMOS device according to thefirst embodiment of the present invention.

In a semiconductor substrate 1, a P-type well area 2 and an N-type wellarea 3 are arranged. The P-type and N-type well areas 2 and 3 areisolated from each other by an device isolation layer 4 of a shallowtrench isolation (STI) structure.

The N-channel MIS transistor is arranged in the P-type well area 2.

The N-channel MIS transistor comprises an N-type diffusion layer 5, anN-type extension layer 6, a gate insulating layer 10, and a gateelectrode 11. A side wall insulating layer 9 is formed on a side wall ofthe gate electrode 11.

As shown in FIG. 1, for example, the gate electrode 11 of the N-channelMIS transistor is made of a material which has a work function in arange of 4.10 eV to 4.40 eV. Here, such a material will be referred toas a low work function material. For the low work function material, ametal selected from the group consisting of Ti, Ta, Zr, Hf, V, Nb, Cr,Mo, W, La, and Y, or a boride, a silicide or a silicon nitride of such ametal is available.

From the standpoint of thermal stability and chemical stability for anLSI process, for the gate electrode of the N-channel MIS transistor, aboride or a silicon nitride of a metal selected from the groupconsisting of Ti, Ta, Zr, Hf, V, Nb, Cr, Mo, W, La, and Y is mostpreferably used.

The P-channel MIS transistor is arranged in the N-type well area 3.

The P-channel MIS transistor comprises a P-type diffusion layer 7, aP-type extension layer 8, a gate insulating layer 10, and a gateelectrode 12. A side wall insulating layer 9 is formed on a side wall ofthe gate electrode 12.

As shown in FIG. 1, for example, the gate electrode 12 of the P-channelMIS transistor is made of a material which has a work function in arange of 4.80 eV to 5.10 eV. Here, such a material will be referred toas a high work function material. For the high work function material,when an insulating material such as SiO₂ or HfSiON is used for the gateinsulating layer 10, a carbon compound of a metal selected from thegroup consisting of Ti, Ta, Zr, Hf, V, Nb, Cr, Mo, W, La, and Y, isused.

Such a carbon compound of a metal has a melting point of above 2000° C.,and is chemically inactive. Thus, from the standpoint of thermalstability and chemical stability for an LSI process, it is veryexcellent.

As described above, according to the first embodiment, the gateelectrode of the N-channel MIS transistor is made of the low workfunction material, and the gate electrode of the P-channel MIStransistor is made of the carbon compound of a metal having the highwork function. Thus, it is possible to provide a CMOS device having lowresistance and high thermal stability, and a gate electrode in whichproblems of depletion or diffusion/penetration of impurities neveroccur.

B. Manufacturing Method

Next, a manufacturing method of the CMOS device of FIG. 2 will bedescribed by way of example in which a carbon compound (TaxCy) oftantalum (Ta) is used for the gate electrode of the P-channel MIStransistor.

First, as shown in FIG. 3, through a normal LSI process, a P-type wellarea 2, an N-type well area 3, and an device isolation layer 4 areformed in a semiconductor substrate 1. Subsequently, for example, a gateinsulating layer 10 is formed by a MOCVD method.

For the gate insulating layer 10, a high dielectric of one selected fromthe group consisting of SiO₂, SiON, TiO₂, HfO₂, Ta₂O₅, ZrO₂, HfSiO,ZrSiO, HfSiON, ZrSiON, HfON, ZrON, La₂O₃, LaSiO, LaAlO, LaHfO, and TiAlOcan be used.

Next, as shown in FIG. 4, for example, a silicon nitride is formed witha thickness of about 300 nm on the gate insulating layer 10 by a LPCVDmethod. Subsequently, this silicon nitride is patterned by aphotoengraving process (PEP) to form a mask material 16 made of siliconnitride on the P-type well area 2.

Next, as shown in FIG. 5, a carbon compound of a metal (metal carbidehereinafter) 12, TaxCy according to the embodiment, is formed with athickness of about 100 nm on the gate insulating layer 10 and the maskmaterial 16.

The metal carbide 12 can be formed by using a deposition method such asa sputtering method or a CVD method. According to the embodiment,however, a peeling-off method based on a lift-off method is employed forthe metal carbide 12 on the mask material 16 as described later. Thus,it is preferable to form the metal carbide 12 by the sputtering methodin which coverage in a step portion is low.

From the standpoint of preventing damage of the gate insulating layer10, it is possible to employ a sputtering method (long throw sputteringmethod) which uses a long throw sputtering device having a distancesufficiently enlarged between a target as a material source and thesemiconductor substrate.

There is no particular limitation on deposition conditions such as gaspressure, a gas flow rate, and plasma power. Deposition conditions maybe decided by using general deposition parameters.

Regarding a composition of TaxCy of the metal carbide 12, when thesputtering method is employed, a material having a stoicheiometriccomposition of Tac (x=1, y1) or a material close to this is used,whereby a chemically stable gate electrode can be provided.

In this case, even when the composition of the TaxCy of the metalcarbide 12 fluctuates, there will be almost no great influence onchemical stability or a value of a work function as long as afluctuation width is about 10%.

Next, as shown in FIG. 6, by the lift-off method, the metal carbide 12on the mask material 16 is peeled off together with the mask material 16shown in FIG. 5. For example, by using a thermal sulfuric acid to peeloff the mask material 16 made of the silicon nitride, the metal carbide12 thereon can be simultaneously peeled off. In this case, the metalcarbide on the N-type well area 3 will not be peeled off as it is in achemically stable state.

Next, as shown in FIG. 7, a silicon nitride 11 of a metal having a lowwork function, TaSiN according to the embodiment, is formed with athickness of about 120 nm on the gate insulating layer 10 and the metalcarbide 12.

In this case, the silicon nitride 11 of a metal can be formed by usingthe deposition method such as the sputtering method or the CVD method.According to the embodiment, however, to prevent damage of the gateinsulating layer 10, the CVD method or the long slow sputtering methodis preferably used.

Next, as shown in FIG. 8, the silicon nitride 11 of a metal is polishedby using a planarizing method such as a chemical mechanical polishing(CMP) method to remove the silicon nitride 11 of a metal from above theN-type well area 3.

Next, as shown in FIG. 9, a photoresist 17 is formed by PEP to processthe gate electrode. By using this photoresist 17 as a mask, the siliconnitride 11 of a metal, the metal carbide 12, and the gate insulatinglayer 10 are etched. Subsequently, the photoresist 17 is removed.

As a result, as shown in FIG. 10, the gate insulating layer 10 and thegate electrode 11 of a low work function are formed on the P well area2, and the gate insulating layer 10 and the gate electrode 12 made ofthe metal carbide (TaxCy) are formed on the N well area 3.

According to the embodiment, the gate electrode 11 of the N-channel MIStransistor is made of TaSiN, and the gate electrode 12 of the P-channelMIS transistor is made of TaxCy.

Thus, by using the same kind of metals for both of the gate electrodes11 and 12, Ta according to the embodiment, selection of a reactive gasfor simultaneously processing both electrodes is facilitated.

Lastly, as shown in FIG. 11, through the normal LSI process, side wallinsulating layers 9 are formed on side walls of the gate electrodes 11and 12, an N-type diffusion layer 5 and an N-type extension layer 6 areformed in the P well area 2, and a P-type diffusion layer 7 and a P-typeextension layer 8 are formed in the N well area 3.

Through the aforementioned process, the CMOS device of FIG. 2 iscompleted.

(2) Second Embodiment

A second embodiment is directed to a CMOS device in which a main portionof a gate electrode of a P-channel MIS transistor is made of a materialsimilar to that of a gate electrode of an N-channel MIS transistor.

A. Structure

FIG. 12 shows a sectional structure of the CMOS device according to thesecond embodiment of the present invention.

In a semiconductor substrate 1, a P-type well area 2 and an N-type wellarea 3 are arranged. The P-type and N-type well areas 2 and 3 areisolated from each other by an device isolation layer 4 of a STIstructure.

The N-channel MIS transistor is arranged in the P-type well area 2.

The N-channel MIS transistor comprises an N-type diffusion layer 5, anN-type extension layer 6, a gate insulating layer 10, and a gateelectrode 11. A side wall insulating layer 9 is formed on a side wall ofthe gate electrode 11.

As in the case of the first embodiment, for example, the gate electrode11 of the N-channel MIS transistor is made of a low work functionmaterial which has a work function in a range of 4.10 eV to 4.40 eV. Forthe low work function material, a metal selected from the groupconsisting of Ti, Ta, Zr, Hf, V, Nb, Cr, Mo, W, La, and Y, or a boride,a silicide or a silicon nitride of such a metal is available.

From the standpoint of thermal stability and chemical stability for anLSI process, for the gate electrode of the N-channel MIS transistor, aboride or a silicon nitride of a metal selected from the groupconsisting of Ti, Ta, Zr, Hf, V, Nb, Cr, Mo, W, La, and Y is mostpreferably used.

The P-channel MIS transistor is arranged in the N-type well area 3.

The P-channel MIS transistor comprises a P-type diffusion layer 7, aP-type extension layer 8, a gate insulating layer 10, and gateelectrodes 11, 12. Side wall insulating layers 9 are formed on sidewalls of the gate electrodes 11, 12.

The gate electrodes 11, 12 of the P-channel MIS transistor havelaminated structures. The gate electrode 11 is made of a low workfunction material similar to that of the gate electrode 11 of theN-channel MIS transistor. The gate electrode 12 is arranged between thegate insulating layer 10 and the gate electrode 11, and made of a highwork function material which has a work function, e.g., in a range of4.80 eV to 5.10 eV.

For the high work function material, when an insulating material such asSiO₂ or HfSiON is used for the gate insulating layer 10, a carboncompound of a metal selected from the group consisting of Ti, Ta, Zr,Hf, V, Nb, Cr, Mo, W, La, and Y, is used.

Such a carbon compound of a metal has a melting point of above 2000° C.,and is chemically inactive. Thus, from the standpoint of thermalstability and chemical stability for an LSI process, it is veryexcellent.

When the gate electrode 12 of the P-channel MIS transistor is made ofthe same metal as that of the gate electrode 11, e.g., Ta, the gateelectrode 12 may employ a structure in which it is a part of the gateelectrode 11, e.g., TaSiN, and carbon atoms (C) are contained in a partthereof.

As described above, according to the second embodiment, the gateelectrode of the P-channel MIS transistor contains the carbon compoundof a metal having a high work function. Thus, it is possible to providea CMOS device having low resistance and high thermal stability, and agate electrode in which problems of depletion or diffusion/penetrationof impurities never occur.

Furthermore, according to the second embodiment, the main portion of thegate electrode of the P-channel MIS transistor, i.e., the gate electrode11, is made of the same material as that of the gate electrode 11 of theN-channel MIS transistor. Thus, great advantages can be provided in easydesigning and easy processing of heat costs for guaranteeing heatresistance.

B. Manufacturing Method

FIRST EXAMPLE

Next, a first example of a manufacturing method of the CMOS device ofFIG. 12 will be described by way of example in which a carbon compound(TaxCy) of tantalum (Ta) is used for the gate electrode of the P-channelMIS transistor.

First, as shown in FIG. 13, through a normal LSI process, a P-type wellarea 2, an N-type well area 3, and an element isolation layer 4 areformed in a semiconductor substrate 1. Subsequently, for example, a gateinsulating layer 10 is formed by a MOCVD method.

For the gate insulating layer 10, a high dielectric of one selected fromthe group consisting of SiO₂, SiON, TiO₂, HfO₂, Ta₂O₅, ZrO₂, HfSiO,ZrSiO, HfSiON, ZrSiON, HfON, ZrON, La_(2O) ₃, LaSiO, LaAlO, LaHfO, andTiAlO can be used.

Next, as shown in FIG. 14, for example, a silicon oxide is formed with athickness of about 5 nm on the gate insulating layer 10 by a LPCVDmethod. Subsequently, this silicon oxide is patterned by aphotoengraving process (PEP) to form a mask material 18 made of siliconoxide on the P-type well area 2.

A carbon layer 19 is formed on the gate insulating layer 10 and the maskmaterial 18 by using a deposition method such as a sputtering method ora CVD method.

In this case, preferably, a thickness of the carbon layer 19 is set to avalue in range of 2 nm or more to 5 nm or less. To secure continuity ofcarbon atoms of the carbon layer 19, its thickness must be set to 2 nmor more. When the thickness of the carbon layer 19 exceeds 5 nm,distortion at the time of reacting the carbon layer 19 with the metal toform a metal carbide facilitates peeling-off of the gate electrode fromthe gate insulating layer.

When the carbon layer 19 is less than 2 nm, a variance occurs in a valueof a work function of the gate electrode after the carbon layer 19 isreacted with the metal to form the metal carbide, creating a possibilitythat the value will become unsuitable for the P-channel MIS transistor.

The carbon layer 19 is peeled off by a lift-off method as describedlater. Thus, it is preferably formed by a sputtering method having lowcoverage in a step portion.

To prevent damage of the gate insulating layer, a so-called long throwsputtering method having a distance sufficiently expanded between atarget as a material source and the semiconductor substrate can beemployed.

There is no particular limitation on deposition conditions such as gaspressure, a gas flow rate, and plasma power. The deposition conditionsmay be decided by using general deposition parameters.

Next, as shown in FIG. 15, the carbon layer 19 on the mask material 18is peeled off together with the mask material 18 shown in FIG. 14 by thelift-off method. For example, when the mask material 18 made of thesilicon oxide is peeled off by using a dilute HF aqueous solution, thecarbon layer 19 thereon is simultaneously peeled off. In this case, thecarbon layer 19 present above the N well area 3 is never peeled off.

Next, as shown in FIG. 16, a silicon nitride 11 of a metal having a lowwork function, TaSiN according to the embodiment, is formed with athickness of about 100 nm on the gate insulating layer 10 and the carbonlayer 19.

The silicon nitride 11 of a metal can be formed by using a depositionmethod such as a sputtering method or a CVD method. According to theembodiment, to prevent damage of the gate insulating layer 10, the CVDmethod or the long throw sputtering method is preferably used.

Next, as shown in FIG. 17, when heat treatment is carried out, thecarbon layer 19 of FIG. 16 chemically reacts with the metal in thesilicon nitride of a metal (TaSiN) 11, Ta according to the embodiment,to change into a carbon compound of a metal (metal carbide hereinafter)12, i.e., TaxCy.

To sufficiently change the carbon layer 19 of FIG. 16 into the metalcarbide 12, a temperature of the heat treatment is set to a value in arange of 500° C. or more to 1100° C. or less. To sufficiently progressthe reaction between the carbon and the metal, a temperature of 500° C.or more is necessary. When a temperature of the heat treatment exceeds1000° C., characteristics deteriorate.

Now, a relation between the temperature of the heat treatment andcharacteristics of the metal carbide 12 formed by the heat treatmentwill be described.

FIG. 24 shows a capacitance (C)-gate voltage (Vg) curve of a MIScapacitor which includes a gate electrode containing the metal carbide12.

A structure before the heat treatment comprises a silicon nitride of ametal (TiSiN), a carbon layer (C), a gate insulating layer (SiO₂), and aP-type well area (p-Si).

When heat treatment is carried out at a temperature of 400° C. for 30minutes, a work function of a gate electrode formed after the heattreatment becomes 4.1 eV. This exhibits physical property value ofTiSiN. If reaction between TiSiN and carbon (C) does not progress atall, a work function of the carbon is exhibited. It can therefore beconcluded that the carbon is captured into TiSiN by heat treatment of atemperature 400° C., and TiSiN has a predominant influence on the workfunction of the gate electrode.

On the other hand, when heat treatment is carried out at a temperatureof 600° C. for 30 minutes, a flat band voltage is shifted by 0.7V to apositive voltage side, and a work function of a gate electrode formedafter the heat treatment becomes about 4.8 eV. This is very close to awork function of TiC. It can be concluded that by the heat treatment ofthe temperature 600° C., reaction between TiSiN and carbon (C)sufficiently progresses, and the carbon layer is almost completelychanged into a metal carbon layer.

In heat treatment at a temperature exceeding 1100° C., a behavior of TiCformed by thermal reaction to further react with the gate insulatinglayer (SiO₂) emerges, consequently causing large current leakage (gateleakage).

According to the embodiment, from the standpoint of reducing currentleakage, as a low work function material to react with the carbon layer,a boride, a silicide, or a silicon nitride of a metal is more preferablethan a single metal.

FIG. 25 shows gate leak (Jg)-gate voltage (Vg) characteristics of theMIS transistor when Ti and TiB are used as low work function materials.

Heat treatment conditions are a temperature 600° C. and time 30 minutes.

As apparent from the drawing, current leakage is very large in the caseof using Ti as the low work function material, while current leakage isgreatly reduced in the case of using TiB as compared with the case ofusing Ti.

Such a trend similarly appears when TiSiN and TiSi are used as low workfunction materials with respect to Ti. The same applies when a boride, asilicide or a silicon nitride thereof is used with respect to Ta, Zr,Hf, V, Nb, Cr, Mo, W, La, or Y.

The occurrence of such large current leakage can be attributed to thefact that when a single metal is used as a low work function material,reaction with the carbon layer progresses very rapidly, and active metalatoms generated in the middle of the reaction reduce the gate insulatinglayer, causing electric short-circuiting between the gate electrode anda source/drain.

On the other hand, when a boride, a silicide or a silicon nitride of ametal is used as a low work function material, reaction with the carbonlayer slowly progresses to suppress generation of active metal atoms.

Description will return to the manufacturing method.

Subsequently, as shown in FIG. 18, a photoresist 17 is formed by PEP toprocess the gate electrode. By using this photoresist 17 as a mask, thesilicon nitride 11 of a metal, the metal carbide 12, and the gateinsulating layer 10 are etched. Subsequently, the photoresist 17 isremoved.

As a result, as shown in FIG. 19, the gate insulating layer 10 and thegate electrode 11 made of the silicon nitride of a metal are formed onthe P well area 2, and the gate insulating layer 10 and the gateelectrodes 11, 12 constituted of stacked layers of the metal carbide(TaxCy) and the silicon nitride of a metal are formed on the N well area3.

According to the embodiment, for example, the gate electrode 11 of theN-channel MIS transistor is made of TaSiN, and the gate electrodes 11,12 of the P-channel MIS transistor are constituted of stacked layers ofTaSiN and TaxCy in this case.

Thus, by using the same kind of materials for main portions (uppermostlayers) of all of the gate electrode 11 of the N-channel MIS transistorand the gate electrodes 11 and 12 of the P-channel MIS transistor, TaSiNaccording to the embodiment, for example, both electrodes can besimultaneously etched by reactive ion etching (RIE).

When a thickness of the gate electrode (TaSiN) 11 of the P-channel MIStransistor is about 100 nm, to realize simultaneous processing of bothgate electrodes, a thickness of the gate electrode (TaxCy) 12 of theP-channel MIS transistor is preferably set to a value in a range of 4 nmto 10 nm. By providing a thickness of 4 nm or more, a work functionvalue suited to the P-channel MIS transistor of TaxCy can be effectivelyused to facilitate setting of a threshold voltage.

Lastly, as shown in FIG. 20, through the normal LSI process, side wallinsulating layers 9 are formed on side walls of the gate electrodes 11and 12, an N-type diffusion layer 5 and an N-type extension layer 6 areformed in the P well area 2, and a P-type diffusion layer 7 and a P-typeextension layer 8 are formed in the N well area 3.

Through the aforementioned process, the CMOS device of FIG. 12 iscompleted.

C. Manufacturing Method

SECOND EXAMPLE

Next, a second example of a manufacturing method of the CMOS device ofFIG. 12 will be described by way of example in which a carbon compound(TaxCy) of tantalum (Ta) is used for the gate electrode of the P-channelMIS transistor.

First, as shown in FIG. 21, through a normal LSI process, a P-type wellarea 2, an N-type well area 3, and an element isolation layer 4 areformed in a semiconductor substrate 1. Subsequently, for example, a gateinsulating layer 10 is formed by a MOCVD method.

For the gate insulating layer 10, a high dielectric of one selected fromthe group consisting of SiO₂, SiON, TiO₂, HfO₂, Ta₂O₅, ZrO₂, HfSiO,ZrSiO, HfSiON, ZrSiON, HfON, ZrON, La₂O₃, LaSiO, LaAlO, LaHfO, and TiAlOcan be used.

Next, a silicon nitride 11 of a metal having a low work function, TaSiNaccording to the embodiment, is formed with a thickness of about 100 nmon the gate insulating layer 10.

The silicon nitride 11 of a metal can be formed by using a depositionmethod such as a sputtering method or a CVD method. According to theembodiment, to prevent damage of the gate insulating layer 10, the CVDmethod or the long throw sputtering method is preferably used.

Subsequently, as shown in FIG. 22, a photoresist 20 is formed on thesilicon nitride 11 of a metal to cover an upper part of the P well area2.

By using this photoresist 20 as a mask, carbon ions are implanted intothe silicon nitride 11 of a metal by ion implantation to form a carbonion area 21. In this case, for example, ion implantation conditions areacceleration energy 10 k of carbon ions, and a dose 1×10¹⁶ cm⁻².

Subsequently, the photoresist 20 is removed by, e.g., an oxygen asher.

Next, as shown in FIG. 23, heat treatment is carried out in an inactiveatmosphere of a temperature 200° C. to 400° C. for 1 hour.

As a result, carbons in the carbon ion area 21 shown in FIG. 22 arediffused in the silicon nitride of a metal which is a low work functionmaterial, and piled up near an interface between the gate insulatinglayer 10 and the silicon nitride 11 of a metal.

Execution of heat treatment at a temperature of 500° C. to 1100° C.causes chemical reaction between the piled-up carbons (C) and a part ofthe low work function material (TaSiN) to change the carbon compound ofa metal (metal carbide hereinafter) 12 to TaxCy according to theembodiment. As a result, the metal carbide 12 is formed near theinterface between the gate insulating layer 10 and the silicon nitride11 of a metal.

Subsequently, through the same process as that of the first example ofthe manufacturing method (see FIGS. 18 to 20), the CMOS device of FIG.12 is completed.

Thus, according to the first example of the manufacturing method, themetal carbide 12 is formed through the formation of the carbon layer bythe sputtering method or the CVD method and the heat treatment. On theother hand, according to the second example of the manufacturing method,the metal carbide 12 is formed through the carbon ion implantation andthe heat treatment.

The carbon ion implantation is an effective method as condition tuningor the like can be easily carried out as compared with the formation ofthe carbon layer by the sputtering method or the CVD method.

(3) Third Embodiment

A third embodiment is directed to a CMOS device in which an interfacestructure between a gate insulating layer and a gate electrode of aP-channel MIS transistor is similar to that of an N-channel MIStransistor.

A. Structure

FIG. 26 shows a sectional structure of the CMOS device according to thethird embodiment of the present invention.

In a semiconductor substrate 1, a P-type well area 2 and an N-type wellarea 3 are arranged. The P-type and N-type well areas 2 and 3 areisolated from each other by an device isolation layer 4 of a STIstructure.

The N-channel MIS transistor is arranged in the P-type well area 2.

The N-channel MIS transistor comprises an N-type diffusion layer 5, anN-type extension layer 6, a gate insulating layer 10, and a gateelectrode 11. A side wall insulating layer 9 is formed on a side wall ofthe gate electrode 11.

As in the case of the first embodiment, for example, the gate electrode11 of the N-channel MIS transistor is made of a low work functionmaterial which has a work function in a range of 4.10 eV to 4.40 eV. Forthe low work function material, a metal selected from the groupconsisting of Ti, Ta, Zr, Hf, V, Nb, Cr, Mo, W, La, and Y, or a boride,a silicide or a silicon nitride of such a metal is available.

From the standpoint of thermal stability and chemical stability for anLSI process, for the gate electrode of the N-channel MIS transistor, aboride or a silicon nitride of a metal selected from the groupconsisting of Ti, Ta, Zr, Hf, V, Nb, Cr, Mo, W, La, and Y is mostpreferably used.

The P-channel MIS transistor is arranged in the N-type well area 3.

The P-channel MIS transistor comprises a P-type diffusion layer 7, aP-type extension layer 8, a gate insulating layer 10, and gateelectrodes 11, 12. Side wall insulating layers 9 are formed on sidewalls of the gate electrodes 11, 12.

The gate electrodes 11, 12 of the P-channel MIS transistor havelaminated structures. The gate electrode 11 is made of a low workfunction material similar to that of the gate electrode 11 of theN-channel MIS transistor. For example, the gate electrode 12 is made ofa high work function material which has a work function in a range of4.80 eV to 5.10 eV.

For the high work function material, when an insulating material such asSiO₂ or HfSiON is used for the gate insulating layer 10, a carboncompound of a metal selected from the group consisting of Ti, Ta, Zr,Hf, V, Nb, Cr, Mo, W, La, and Y, is used.

Such a carbon compound of a metal has a melting point of above 2000° C.,and is chemically inactive. Thus, from the standpoint of thermalstability and chemical stability for an LSI process, it is veryexcellent.

According to the embodiment, the gate electrode 11 is arranged betweenthe gate insulating layer 10 and the gate electrode 12.

Thus, an interface between the gate insulating layer 10 and the gateelectrodes 11, 12 of the P-channel MIS transistor employs a structuresimilar to that of the N-channel MIS transistor, i.e., a structure inwhich the low work function material is in contact with the gateinsulating layer 10.

Accordingly, management of thermal budgets to maintain thermal stabilityon the interface between the gate insulating layer 10 and the gateelectrodes 11, 12 is facilitated. By using a material such as TaSiN,TiSiN, or HfSiN having high interface stability with respect to the gateinsulating layer 10 for a low work function material, it is possible toexpand a range of materials selectable as metal carbides.

For example, as selection conditions of a metal carbide, priority isplaced on a work function. Even when reaction with the gate insulatinglayer is feared, as there is a low work function material between themetal carbide and the gate insulating layer, it is possible to secureinterface stability between the gate insulating layer 10 of theP-channel MIS transistor and the gate electrodes 11, 12.

Consideration will be given to a case of using Ti or HfC for a metalcarbide. In this case, there is a possibility that these materials willgenerate TiO₂ or HfO₂ during, e.g., high-temperature heat treatment, toreduce SiO₂ of the gate insulating layer 10. According to theembodiment, however, as there is a low work function material, such asTiSiN or HfSiN, it is possible to prevent reduction of the insulatinglayer 10.

A work function of the gate electrodes 11, 12 can be decided mainly bythe gate electrode 12 made of the metal carbide by setting a thicknessof the gate electrode 11 made of the low work function material to 3 nmor less.

Thus, the work function of the gate electrodes 11, 12 is decided mainlyby the gate electrode 12 made of the metal carbide, whereby setting ofthe work function of the P-channel MIS transistor is facilitated.

When the gate electrode 12 of the P-channel MIS transistor is made ofthe same metal as that of the gate electrode 11, e.g., Ta, the gateelectrode 12 may employ a structure in which it is a part of the gateelectrode 11, e.g., TaSiN, and carbon atoms (C) are contained in a partthereof.

As described above, according to the third embodiment, the gateelectrode of the P-channel MIS transistor contains the carbon compoundof a metal having a high work function. Thus, it is possible to providea CMOS device having low resistance and high thermal stability, and agate electrode in which problems of depletion or diffusion/penetrationof impurities never occur.

Furthermore, according to the third embodiment, the interface structurebetween the gate insulating layer and the gate electrode of theP-channel MIS transistor is similar to that of the N-channel MIStransistor. Thus, great advantages can be provided in easy designing andeasy processing of thermal budgets for guaranteeing thermal stability.

B. Manufacturing Method

Next, a manufacturing method of the CMOS device of FIG. 26 will bedescribed by way of example in which a carbon compound (HfxCy) ofhafnium (Hf) is used for the gate electrode of the P-channel MIStransistor.

First, as shown in FIG. 27, through a normal LSI process, a P-type wellarea 2, an N-type well area 3, and an element isolation layer 4 areformed in a semiconductor substrate 1. Subsequently, for example, a gateinsulating layer 10, e.g., HfSiON, is formed with a thickness of about 3nm by a MOCVD method.

For the gate insulating layer 10, in addition to HfSiON, a highdielectric of one selected from the group consisting of SiO₂, SiON,TiO₂, HfO₂, Ta₂O₅, ZrO₂, HfSiO, ZrSiO, HfSiON, ZrSiON, HfON, ZrON,La₂O₃, LaSiO, LaAlO, LaHfO, and TiAlO can be used.

Next, as shown in FIG. 28, for example, a low work function material,such as HfSiN, is formed with a thickness of about 10 nm on the gateinsulating layer 10 by a sputtering method or a CVD method.

A mask material 20 made of photoresist is formed on the low workfunction material 11 to cover an upper part of the P-type well area 2.Then, by using this mask material 20 as a mask, carbon ions areimplanted into the low work function material 11 by ion implantation toform a carbon ion area 12. Subsequently, the mask material 20 isremoved.

Then, for example, annealing is carried out at a temperature of 600 to1100° C. Carbons of the carbon ion area 12 are reacted with the metal inthe low work function material 11 to change the carbon ion area 12 intoa carbon compound of a metal (metal carbide hereinafter), i.e., HfC.

Through this annealing, an upper part of the low work function material11 becomes a metal carbide (HfC) 12, and a portion brought into contactwith the gate insulating layer 10 is maintained as a low work functionmaterial (HfSiN) 11. In this case, above the N well region 3, the metalcarbide 12 is controlled to be thicker than the low work functionmaterial 11, and a thickness of the low work function material 11 iscontrolled to be 3 nm or less.

Next, as shown in FIG. 29, a photoresist 17 is formed by PEP to processthe gate electrode. By using this photoresist 17 as a mask, the low workfunction material 11, the metal carbide 12, and the gate insulatinglayer 10 are etched. Subsequently, the photoresist 17 is removed.

As a result, the gate insulating layer 10 and the gate electrode 11 madeof the low work function material are formed on the P well area 2, andthe gate insulating layer 10 and the gate electrodes 11, 12 made of thelow work function material and the metal carbide are formed on the Nwell area 3.

According to the embodiment, for example, the gate electrode 11 of theN-channel MIS transistor is made of HfSiN, and the gate electrodes 11,12 of the P-channel MIS transistor are constituted of stacked layers ofHfSiN and HfC in this case.

That is, as the interface structure between the gate insulating layerand the gate electrode of the P-channel MIS transistor is similar tothat of the N-channel MIS transistor, thermal budget designing andprocessing for guaranteeing thermal stability is facilitated.

When a thickness of the gate electrode (HfSiN) 11 of the N-channel MIStransistor is about 10 nm, a thickness of the gate electrode (HfSiN) 11of the P-channel MIS transistor is preferably set to a value of 7 nm ormore, and a thickness of the gate electrode (HfC) 12 is preferably setto a value of 3 nm or more.

Lastly, as shown in FIG. 30, through the normal LSI process, side wallinsulating layers 9 are formed on side walls of the gate electrodes 11and 12, an N-type diffusion layer 5 and an N-type extension layer 6 areformed in the P well area 2, and a P-type diffusion layer 7 and a P-typeextension layer 8 are formed in the N well area 3.

Through the aforementioned process, the CMOS device of FIG. 26 iscompleted.

(4) Fourth Embodiment

A fourth embodiment is an improved example of the first embodiment. ACMOS device of the fourth embodiment has a feature that uppermost layersof gate electrodes of P and N-channel MIS transistors are made ofsemiconductors (Si, SiGe or the like).

A. Structure

FIG. 31 shows a sectional structure of the CMOS device according to thefourth embodiment of the present invention.

In a semiconductor substrate 1, a P-type well area 2 and an N-type wellarea 3 are arranged. The P-type and N-type well areas 2 and 3 areisolated from each other by an device isolation layer 4 of a STIstructure.

The N-channel MIS transistor is arranged in the P-type well area 2.

The N-channel MIS transistor comprises an N-type diffusion layer 5, anN-type extension layer 6, a gate insulating layer 10, and gateelectrodes 11, 13A. Side wall insulating layers 9 are formed on sidewalls of the gate electrodes 11, 13A.

For example, the gate electrodes 11, 13A of the N-channel MIS transistorare constituted of stacked layers of a low work function material 11which has a work function in a range of 4.10 eV to 4.40 eV, and aconductive semiconductor 13A, e.g., polysilicon containing N-typeimpurities, formed on the low work function material 11.

The P-channel MIS transistor is arranged in the N-type well area 3.

The P-channel MIS transistor comprises a P-type diffusion layer 7, aP-type extension layer 8, a gate insulating layer 10, and gateelectrodes 12, 13B. Side wall insulating layers 9 are formed on sidewalls of the gate electrodes 12, 13B.

For example, the gate electrodes 12, 13B of the P-channel MIS transistorare constituted of stacked layers of a high work function material whichhas a work function in a range of 4.80 eV to 5.10 eV, and a conductivesemiconductor 13B, e.g., polysilicon containing P-type impurities, onthe high work function material 12.

As described above, according to the first embodiment, as in the case ofthe first embodiment, it is possible to realize a gate electrodestructure having low resistance and thermal stability in which problemsof depletion or diffusion/penetration of impurities never occur, and bymaking the uppermost layer of the gate electrode of the semiconductor,effects such as increases in heat resistance and corrosion resistanceand process facilitation can be provided.

B. Manufacturing Method

Next, a manufacturing method of the CMOS device of FIG. 31 will bedescribed by way of example in which a carbon compound (TaxCy) oftantalum (Ta) is used for the gate electrode of the P-channel MIStransistor.

First, as shown in FIG. 32, through a normal LSI process, a P-type wellarea 2, an N-type well area 3, and an element isolation layer 4 areformed in a semiconductor substrate 1. Subsequently, for example, a gateinsulating layer 10 is formed by a MOCVD method.

Next, as shown in FIG. 33, for example, a silicon nitride is formed witha thickness of about 300 nm on the gate insulating layer 10 by a LPCVDmethod. Subsequently, this silicon nitride is patterned by PEP to form amask material 16 made of silicon nitride on the P-type well area 2.

Next, as shown in FIG. 34, a carbon compound of a metal (metal carbidehereinafter) 12, TaxCy according to the embodiment, is formed with athickness of about 100 nm on the gate insulating layer 10 and the maskmaterial 16.

In this case, the metal carbide 12 can be formed by using a depositionmethod such as a sputtering method or a CVD method as in the case of thefirst embodiment.

Next, as shown in FIG. 35, by a lift-off method, the metal carbide 12 onthe mask material 16 is peeled off together with the mask material 16shown in FIG. 34. For example, by using a hot sulfuric acid to peel offthe mask material 16 made of the silicon nitride, the metal carbide 12thereon can be simultaneously peeled off. In this case, the metalcarbide on the N-type well area 3 will not be peeled off as it is in achemically stable state.

Next, as shown in FIG. 36, a silicon nitride 11 of a metal having a lowwork function, TaSiN according to the embodiment, is formed with athickness of about 120 nm on the gate insulating layer 10 and the metalcarbide 12.

In this case, the silicon nitride 11 of a metal can be formed by usingthe deposition method such as the sputtering method or the CVD method asin the case of the first embodiment.

Next, as shown in FIG. 37, the silicon nitride 11 of a metal is polishedby using a planarizing method such as a CMP method to remove the siliconnitride 11 of a metal from above the N-type well area 3.

For example, by a LPCVD method, a semiconductor 13, e.g., polysilicon,is formed on the silicon nitride 11 of a metal and the metal carbide 12.

Next, as shown in FIG. 38, a photoresist 17 is formed by PEP to processthe gate electrode. By using this photoresist 17 as a mask, the siliconnitride 11 of a metal, the metal carbide 12, the gate insulating layer10, and the semiconductor 13 are etched. Subsequently, the photoresist17 is removed.

As a result, as shown in FIG. 39, the gate insulating layer 10, the gateelectrode 11 of a low work function, and the gate electrode 13A made ofthe semiconductor are formed on the P well area 2, and the gateinsulating layer 10, the gate electrode 12 made of the metal carbide(TaxCy), and the gate electrode 13B made of the semiconductor are formedon the N well area 3.

Lastly, as shown in FIG. 40, through the normal LSI process, side wallinsulating layers 9 are formed on side walls of the gate electrodes 11,12, 13A, and 13B, an N-type diffusion layer 5 and an N-type extensionlayer 6 are formed in the P well area 2, and a P-type diffusion layer 7and a P-type extension layer 8 are formed in the N well area 3.

Through the aforementioned process, the CMOS device of FIG. 31 iscompleted.

As described above, according to the embodiment, the uppermost layers ofthe gate electrodes 11, 13A of the N-channel MIS transistor and theuppermost layers of the gate electrodes 12, 13B of the P-channel MIStransistor are made of semiconductors.

Thus, for example, conditions of annealing for activating impurities inthe N-type layer 5, the N-type extension layer 6, the P-type diffusionlayer 7, and the P-type extension layer 8 and recovering from damageduring ion implantation can be softened to conditions used for a normalpolysilicon gate.

Furthermore, it is possible to provide effects of improving a currentdrive current of the MIS transistor constituting the CMOS device andlong-time reliability of the gate insulating layer.

(5) Fifth Embodiment

A fifth embodiment is an improved example of the second embodiment. ACMOS device of the fifth embodiment has a feature that uppermost layersof gate electrodes of P and N-channel MIS transistors are made ofsemiconductors (Si, SiGe or the like).

A. Structure

FIG. 41 shows a sectional structure of the CMOS device according to thefifth embodiment of the present invention.

In a semiconductor substrate 1, a P-type well area 2 and an N-type wellarea 3 are arranged. The P-type and N-type well areas 2 and 3 areisolated from each other by an device isolation layer 4 of a STIstructure.

The N-channel MIS transistor is arranged in the P-type well area 2.

The N-channel MIS transistor comprises an N-type diffusion layer 5, anN-type extension layer 6, a gate insulating layer 10, and gateelectrodes 11, 13A. Side wall insulating layers 9 are formed on sidewalls of the gate electrodes 11, 13A.

For example, the gate electrodes 11, 13A of the N-channel MIS transistorare constituted of stacked layers of a low work function material 11which has a work function in a range of 4.10 eV to 4.40 eV, and aconductive semiconductor 13A, e.g., polysilicon containing N-typeimpurities, formed on the low work function material 11.

The P-channel MIS transistor is arranged in the N-type well area 3.

The P-channel MIS transistor comprises a P-type diffusion layer 7, aP-type extension layer 8, a gate insulating layer 10, and gateelectrodes 11, 12, and 13B. Side wall insulating layers 9 are formed onside walls of the gate electrodes 11, 12, and 13B.

The gate electrodes 11, 12, and 13B of the P-channel MIS transistor havea laminated structure. The gate electrode 11 is made of the same lowwork function material as that of the gate electrode 11 of the N-channelMIS transistor. The gate electrode 12 is arranged between the gateinsulating layer 10 and the gate electrode 11, and made of, e.g., a highwork function material which has a work function in a range of 4.80 eVto 5.10 eV.

The gate electrode 13B is formed on the gate electrode 11, and made of aconductive semiconductor, e.g., polysilicon containing N-typeimpurities.

As described above, according to the fifth embodiment, as in the case ofthe second embodiment, it is possible to realize a gate electrodestructure having low resistance and thermal stability in which problemsof depletion or diffusion/penetration of impurities never occur, and bymaking the uppermost layer of the gate electrode of the semiconductor,effects such as increases in heat resistance and corrosion resistanceand process facilitation can be provided.

B. Manufacturing Method

Next, a manufacturing method of the CMOS device of FIG. 41 will bedescribed by way of example in which a carbon compound (TaxCy) oftantalum (Ta) is used for the gate electrode of the P-channel MIStransistor.

First, as shown in FIG. 42, a process up to formation of a siliconnitride 11 of a metal and a metal carbide 12 on the gate insulatinglayer 10 is carried out by the same method as that of the secondembodiment, e.g., the manufacturing method (First Example).

Next, as shown in FIG. 43, for example, by a LPCVD method, asemiconductor 13, e.g., polysilicon, is formed on the silicon nitride 11of a metal.

Next, as shown in FIG. 44, a photoresist 17 is formed by PEP to processthe gate electrode. By using this photoresist 17 as a mask, thesemiconductor 13 is etched by RIE.

As a result, as shown in FIG. 45, the gate electrode 13A is formed onthe P well area 2, and the gate electrode 13B is formed on the N wellarea 3. Subsequently, the photoresist 17 is removed.

Next, as shown in FIG. 46, by using the gate electrodes 13A, 13B asmasks, the silicon nitride 11 of a metal, the metal carbide 12, and thegate insulating layer 10 are etched by RIE.

Accordingly, the gate insulating layer 10 and the gate electrodes 11,13A made of the silicon nitride of a metal and the semiconductor arteformed on the P well area 2. The gate insulating layer 10 and the gateelectrodes 11, 12, and 13B constituted of laminated layers of the metalcarbide (TaxCy), the silicon nitride of a metal and the semiconductorare formed on the N well area 3.

Lastly, as shown in FIG. 47, through the normal LSI process, side wallinsulating layers 9 are formed on side walls of the gate electrodes 11,12, 13A, and 13B, an N-type diffusion layer 5 and an N-type extensionlayer 6 are formed in the P well area 2, and a P-type diffusion layer 7and a P-type extension layer 8 are formed in the N well area 3.

Through the aforementioned process, the CMOS device of FIG. 41 iscompleted.

The manufacturing method of the embodiment is based on the manufacturingmethod (First Example) of the second embodiment. Needless to say,however, the CMOS device of FIG. 41 can be formed based on themanufacturing method (Second Example).

(4) Sixth Embodiment

A sixth embodiment is an improved example of the third embodiment. ACMOS device of the sixth embodiment has a feature that uppermost layersof gate electrodes of P and N-channel MIS transistors are made ofsemiconductors (Si, SiGe or the like).

A. Structure

FIG. 48 shows a sectional structure of the CMOS device according to thesixth embodiment of the present invention.

In a semiconductor substrate 1, a P-type well area 2 and an N-type wellarea 3 are arranged. The P-type and N-type well areas 2 and 3 areisolated from each other by an device isolation layer 4 of a STIstructure.

The N-channel MIS transistor is arranged in the P-type well area 2.

The N-channel MIS transistor comprises an N-type diffusion layer 5, anN-type extension layer 6, a gate insulating layer 10, and gateelectrodes 11, 13A. Side wall insulating layers 9 are formed on sidewalls of the gate electrodes 11, 13A.

For example, the gate electrodes 11, 13A of the N-channel MIS transistorare constituted of stacked layers of a low work function material 11which has a work function in a range of 4.10 eV to 4.40 eV, and aconductive semiconductor 13A, e.g., polysilicon containing N-typeimpurities, formed on the low work function material 11.

The P-channel MIS transistor is arranged in the N-type well area 3.

The P-channel MIS transistor comprises a P-type diffusion layer 7, aP-type extension layer 8, a gate insulating layer 10, and gateelectrodes 11, 12, and 13B. Side wall insulating layers 9 are formed onside walls of the gate electrodes 11, 12, and 13B.

The gate electrodes 11, 12, and 13B of the P-channel MIS transistor havea laminated structure. The gate electrode 11 is made of the same lowwork function material as that of the gate electrode 11 of the N-channelMIS transistor. The gate electrode 12 is made of, e.g., a high workfunction material which has a work function in a range of 4.80 eV to5.10 eV.

The gate electrode 13B is formed on the gate electrode 12, and made of aconductive semiconductor e.g., polysilicon containing P-type impurities.

As described above, according to the sixth embodiment, as in the case ofthe third embodiment, it is possible to realize a gate electrodestructure having low resistance and thermal stability in which problemsof depletion or diffusion/penetration of impurities never occur, and bymaking the uppermost layer of the gate electrode of the semiconductor,effects such as increases in thermal stability and corrosion resistanceand process facilitation can be provided.

B. Manufacturing Method

Next, a manufacturing method of the CMOS device of FIG. 48 will bedescribed by way of example in which a carbon compound (HfxCy) ofhafnium (Hf) is used for the gate electrode of the P-channel MIStransistor.

First, as shown in FIG. 49, through a normal LSI process, a P-type wellarea 2, an N-type well area 3, and an element isolation layer 4 areformed in a semiconductor substrate 1. Subsequently, for example, a gateinsulating layer 10 is formed with a thickness of about 3 nm by a MOCVDmethod.

Then, a low work function material 11, e.g., HfSiN, is formed with athickness of about 10 nm on the gate insulating layer by using adeposition method such as a sputtering method or a CVD method.Subsequently, for example, by a LPCVD method, a semiconductor 22, e.g.,polysilicon, is formed on the low work function material 11.

Next, as shown in FIG. 50, a mask material 20 made of a photoresist isformed on the semiconductor 22 to cover an upper part of the P-type wellarea 2. Then, by using this mask material 20 as a mask, carbon ions areimplanted into the semiconductor 22 by ion implantation to form a carbonion area 23. Subsequently, the mask material 20 is removed.

Next, as shown in FIG. 51, for example, heat treatment is carried out ata temperature of 200 to 400° C. for about 1 hour to pile up carbon atomson an interface between the low work function material 11 and thesemiconductor 13. Subsequently, annealing is carried out at atemperature of 600 to 1100° C. The metal in the low work functionmaterial 11 is reacted with the carbons to form a carbon compound (metalcarbide hereinafter) 12 of a metal, e.g., HfC, between the low workfunction material 11 and the semiconductor 13.

Through this annealing, an upper part of the low work function material11 becomes a metal carbide (HfC) 12, and a portion brought into contactwith the gate insulating layer 10 is maintained as the low work functionmaterial (HfSiN) 11. In this case, the metal carbide 12 is controlled tobe thicker than the low work function material 11 above the N-type wellare 3, and a thickness of the low work function material is controlledto be 3 nm or less.

Next, as shown in FIG. 52, a photoresist 17 is formed by PEP to processthe gate electrode. By using this photoresist 17 as a mask, thesemiconductor 22 is etched by RIE.

Subsequently, as shown in FIG. 53, by using the photoresist 17 as amask, the silicon nitride 11 of a metal, the metal carbide 12, and thegate insulating layer 10 are etched by RIE.

As a result, the gate insulating layer 10, and the gate electrodes 11,13A made of the silicon nitride of a metal and the semiconductor areformed on the P well area 2, and the gate insulating layer 10, and thegate electrodes 11, 12 and 13B constituted of stacked layers of themetal carbide (TaxCy), the silicon nitride of the metal and thesemiconductor are formed on the N well area 3.

Subsequently, the photoresist 17 is removed.

Lastly, as shown in FIG. 54, through the normal LSI process, side wallinsulating layers 9 are formed on side walls of the gate electrodes 11,12, 13A, and 13B, an N-type diffusion layer 5 and an N-type extensionlayer 6 are formed in the P well area 2, and a P-type diffusion layer 7and a P-type extension layer 8 are formed in the N well area 3.

Through the aforementioned process, the CMOS device of FIG. 48 iscompleted.

3. Others

As described above, according to the embodiments of the presentinvention, it is possible to provide a CMOS device having low resistanceand thermal stability, and a gate electrode in which problems ofdepletion, diffusion of impurities and penetration never occur, and amanufacturing method of no increases in the number of steps orcomplexity.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the invention in its broader aspects isnot limited to the specific details and representative embodiments shownand described herein. Accordingly, various modifications may be madewithout departing from the spirit or scope of the general inventionconcept as defined by the appended claims and their equivalents.

1. A semiconductor device comprising: a P-channel MIS transistor whichincludes an N-type semiconductor layer, a first gate insulating layerformed on the N-type semiconductor layer, and a first gate electrodeformed on the first gate insulating layer and containing a carboncompound of a metal; and an N-channel MIS transistor which includes aP-type semiconductor layer, a second gate insulating layer formed on theP-type semiconductor layer, and a second gate electrode formed on thesecond gate insulating layer.
 2. The semiconductor device according toclaim 1, wherein the second gate electrode is made of a metal selectedfrom the group consisting of Ti, Ta, Zr, Hf, V, Nb, Cr, Mo, W, La, andY, or a boride, a silicide, or a silicon nitride of the metal.
 3. Thesemiconductor device according to claim 1, wherein each of the firstgate insulating layer and the first gate electrode is made of such amaterial that a work function of the first gate electrode takes a valuesuitable for the P-channel MIS transistor.
 4. The semiconductor deviceaccording to claim 1, wherein the first and second gate electrodescontain the same metal.
 5. The semiconductor device according to claim1, wherein each of the first and second gate electrodes has a laminatedstructure, and an uppermost layer thereof is made of one of Si and SiGe.6. The semiconductor device according to claim 1, wherein the metal isone selected from the group consisting of Ti, Ta, Zr, Hf, V, Nb, Cr, Mo,W, La, and Y.
 7. The semiconductor device according to claim 1, whereinthe first gate insulating layer is one selected from the groupconsisting of SiO₂, SiON, TiO₂, HfO₂, Ta₂O₃, ZrO₂, HfSiO, ZrSiO, HfSiON,ZrSiON, HfON, ZrON, La₂O₃, LaSiO, LaAlO, LaHfO, and TiAlO.
 8. Asemiconductor device comprising: a P-channel MIS transistor whichincludes an N-type semiconductor layer, a first gate insulating layerformed on the N-type semiconductor layer, and a first gate electrodeformed on the first gate insulating layer and in which a carbon compoundof a metal is present on an interface between the first gate insulatinglayer and the first gate electrode; and an N-channel MIS transistorwhich includes a P-type semiconductor layer, a second gate insulatinglayer formed on the P-type semiconductor layer, and a second gateelectrode formed on the second gate insulating layer.
 9. Thesemiconductor device according to claim 8, wherein each of the first andthe second gate electrodes is made of a metal selected from the groupconsisting-of Ti, Ta, Zr, Hf, V, Nb, Cr, Mo, W, La, and Y, or a boride,a silicide, or a silicon nitride of the metal.
 10. The semiconductordevice according to claim 8, wherein the first and second gateelectrodes contain the same metal.
 11. The semiconductor deviceaccording to claim 8, wherein the first and second gate electrodes aremade of the same material.
 12. The semiconductor device according toclaim 1, wherein each of the first gate insulating layer, the first gateelectrode, and the carbon compound of a metal is made of such a materialthat a work function of the first gate electrode takes a value suitablefor the P-channel MIS transistor.
 13. The semiconductor device accordingto claim 8, wherein each of the first and second gate electrodes has alaminated structure, and an uppermost layer thereof is made of one of Siand SiGe.
 14. The semiconductor device according to claim 8, wherein themetal is one selected from the group consisting of Ti, Ta, Zr, Hf, V,Nb, Cr, Mo, W, La, and Y.
 15. The semiconductor device according toclaim 8, wherein the first gate insulating layer is one selected fromthe group consisting of SiO₂, SION, TiO₂, HfO₂, Ta₂O₃, ZrO₂, HfSiO,ZrSiO, HfSiON, ZrSiON, HfON, ZrON, La₂O₃, LaSiO, LaAlO, LaHfO, andTiAlO.
 16. A semiconductor device comprising: a P-channel MIS transistorwhich includes an N-type semiconductor layer, a first gate insulatinglayer formed on the N-type semiconductor layer, and a first gateelectrode formed on the first gate insulating-layer and in which acarbon compound of a metal is present on a portion different from aninterface between the first gate insulating layer and the first gateelectrode; and an N-channel MIS transistor which includes a P-typesemiconductor layer, a second gate insulating layer formed on the P-typesemiconductor layer, and a second gate electrode formed on the secondgate insulating layer.
 17. The semiconductor device according to claim16, wherein each of the first and the second gate electrodes is made ofa metal selected from the group consisting of Ti, Ta, Zr, Hf, V, Nb, Cr,Mo, W, La, and Y, or a boride, a silicide, or a silicon nitride of themetal.
 18. The semiconductor device according to claim 16, wherein thefirst and second gate electrodes contain the same metal.
 19. Thesemiconductor device according to claim 16, wherein the first and secondgate electrodes are made of the same material.
 20. The semiconductordevice according to claim 16, wherein each of the first gate insulatinglayer, the first gate electrode, and the carbon compound of a metal ismade of such a material that a work function of the first gate electrodetakes a value suitable for the P-channel MIS transistor.
 21. Thesemiconductor device according to claim 16, wherein the first gateelectrode is formed such that a thickness of the portion of the carboncompound of a metal is thinner than those of other portions, and thethickness of the portion of the carbon compound of a metal is 3 nm orless.
 22. The semiconductor device according to claim 16, wherein eachof the first and second gate electrodes has a laminated structure, andan uppermost layer thereof is made of one of Si and SiGe.
 23. Thesemiconductor device according to claim 16, wherein the metal is oneselected from the group consisting of Ti, Ta, Zr, Hf, V, Nb, Cr, Mo, W,La, and Y.
 24. The semiconductor device according to claim 16, whereinthe first gate insulating layer is one selected from the groupconsisting of SiO₂, SiON, TiO₂, HfO₂, Ta₂O₃, ZrO₂, HfSiO, ZrSiO, HfSiON,ZrSiON, HfON, ZrON, La₂O₃, LaSiO, LaAlO, LaHfO, and TiAlO.
 25. Amanufacturing method of a semiconductor device comprising: forming gateinsulating layers on a P-type semiconductor area and an N-typesemiconductor area; forming a first gate material made of a metal, or aboride, silicide or a silicon nitride thereof on the gate insulatinglayer on the P-type semiconductor area; forming a second gate materialmade of a carbon compound of the metal on the gate insulating layer onthe N-type semiconductor area; simultaneously etching the first andsecond gate materials to form a first gate electrode from the first gatematerial and a second gate electrode from the second gate material; andforming an N-type diffusion layer in the P-type semiconductor area and aP-type diffusion layer in the N-type semiconductor area.
 26. Themanufacturing method according to claim 25, further comprisingdepositing one of Si and SiGe on the first and second gate materials.27. The manufacturing method according to claim 25, wherein the metal isone selected from the group consisting of Ti, Ta, Zr, Hf, V, Nb, Cr, Mo,W, La, and Y.
 28. A manufacturing method of a semiconductor devicecomprising: forming gate insulating layers on a P-type semiconductorarea and an N-type semiconductor area; forming a carbon layer on thegate insulating layer on the N-type semiconductor area; forming a gatematerial made of a metal, or a boride, silicide or a silicon nitridethereof on the gate insulating layer and the carbon layer on the P-typesemiconductor area; converting the carbon layer into a carbon compoundof the metal by heat treatment; etching the gate material and the carboncompound of the metal to form a first gate electrode made of the gatematerial and a second gate electrode made of the gate material and thecarbon compound of the metal; and forming an N-type diffusion layer inthe P-type semiconductor area and a P-type diffusion layer in the N-typesemiconductor area.
 29. The manufacturing method according to claim 28,wherein a thickness of the carbon layer is set to a value in a range of2 nm to 5 nm.
 30. The manufacturing method according to claim 28,wherein a temperature of the heat treatment is set to a value in a rangeof 500° C. to 1100° C.
 31. The manufacturing method according to claim28, further comprising depositing one of Si and SiGe on the gatematerial.
 32. The manufacturing method according to claim 28, whereinthe metal is one selected from the group consisting of Ti, Ta, Zr, Hf,V, Nb, Cr, Mo, W, La, and Y.
 33. A manufacturing method of asemiconductor device comprising: forming gate insulating layers on aP-type semiconductor area and an N-type semiconductor area; forming agate material made of a metal, or a boride, silicide or a siliconnitride thereof on the gate insulating layer; implanting carbon ionsinto the gate material on the N-type semiconductor area; forming acarbon compound of a metal on an interface between the gate insulatinglayer and the gate material on the N-type semiconductor area by heattreatment; etching the gate material and the carbon compound of themetal to form a first gate electrode made of the gate material and asecond gate electrode made of the gate material and the carbon compoundof the metal; and forming an N-type diffusion layer in the P-typesemiconductor area and a P-type diffusion layer in the N-typesemiconductor area.
 34. The manufacturing method according to claim 33,wherein the heat treatment comprises heat treatment at a temperature of200° C. to 400° C. for 1 hour or more, and heat treatment at atemperature of 500° C. to 1100° C.
 35. The manufacturing methodaccording to claim 33, further comprising depositing one of Si and SiGeon the gate material.
 36. The manufacturing method according to claim33, wherein the metal is one selected from the group consisting of Ti,Ta, Zr, Hf, V, Nb, Cr, Mo, W, La, and Y.
 37. A manufacturing method of asemiconductor device comprising: forming gate insulating layers on aP-type semiconductor area and an N-type semiconductor area; forming agate material made of a metal, or a boride, silicide or a siliconnitride thereof on the gate insulating layer; implanting carbon ionsinto the gate material on the N-type semiconductor area; forming acarbon compound of a metal on the gate material on the N-typesemiconductor area by heat treatment; etching the gate material and thecarbon compound of the metal to form a first gate electrode made of thegate material and a second gate electrode made of the gate material andthe carbon compound of the metal; and forming an N-type diffusion layerin the P-type semiconductor area and a P-type diffusion layer in theN-type semiconductor area.
 38. The manufacturing method according toclaim 37, wherein a temperature of the heat treatment is set to a valuein a range of 500° C. to 1100° C.
 39. The manufacturing method accordingto claim 37, further comprising depositing one of Si and SiGe on thegate material.
 40. The manufacturing method according to claim 37,wherein the metal is one selected from the group consisting of Ti, Ta,Zr, Hf, V, Nb, Cr, Mo, W, La, and Y.
 41. A manufacturing method of asemiconductor device comprising: forming gate insulating layers on aP-type semiconductor area and an N-type semiconductor area; forming agate material made of a metal, or a boride, silicide or a siliconnitride thereof on the gate insulating layer; forming a semiconductorlayer made of one of Si and SiGe on the gate material; implanting carbonions into the semiconductor layer on the N-type semiconductor area;forming a carbon compound of a metal on an interface between the gateinsulating layer and the semiconductor layer on the N-type semiconductorarea by heat treatment; etching the gate material, the carbon compoundof the metal and the semiconductor layer to form a first gate electrodemade of the gate material and the semiconductor layer and a second gateelectrode made of the carbon compound of the metal and the semiconductorlayer; and forming an N-type diffusion layer in the P-type semiconductorarea and a P-type diffusion layer in the N-type semiconductor area. 42.The manufacturing method according to claim 41, wherein the heattreatment comprises heat treatment at a temperature of 200° C. to 400°C. for 1 hour or more, and heat treatment at a temperature of 500° C. to1100° C.
 43. The manufacturing method according to claim 41, wherein themetal is one selected from the group consisting of Ti, Ta, Zr, Hf, V,Nb, Cr, Mo, W, La, and Y.